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hzs?l series silicon epitaxial planar zener diodes absolute maximum ratings (t a = 25 ) parameter symbol value unit power dissipation p tot 500 mw junction temperature t j 175 storage temperature range t stg - 55 to + 175 characteristics at t a = 25 (v f = 1 v max. at i f = 100 ma) type zener voltage 1) reverse leakage current dynamic resistance v zt at l zt i r at v r z zt at l zt min. (v) max. (v) (ma) max. (a) (v) max. ( ? ) (ma) hzs6la1 5.2 5.5 0.5 1 2 150 0.5 hzs6la2 5.3 5.6 0.5 1 2 150 0.5 hzs6la3 5.4 5.7 0.5 1 2 150 0.5 hzs6lb1 5.5 5.8 0.5 1 2 80 0.5 hzs6lb2 5.6 5.9 0.5 1 2 80 0.5 hzs6lb3 5.7 6 0.5 1 2 80 0.5 hzs6lc1 5.8 6.1 0.5 1 2 60 0.5 hzs6lc2 6 6.3 0.5 1 2 60 0.5 hzs6lc3 6.1 6.4 0.5 1 2 60 0.5 hzs7la1 6.3 6.6 0.5 1 3.5 60 0.5 hzs7la2 6.4 6.7 0.5 1 3.5 60 0.5 hzs7la3 6.6 6.9 0.5 1 3.5 60 0.5 hzs7lb1 6.7 7 0. 5 1 3.5 60 0.5 hzs7lb2 6.9 7.2 0.5 1 3.5 60 0.5 hzs7lb3 7 7.3 0. 5 1 3.5 60 0.5 hzs7lc1 7.2 7.6 0.5 1 3.5 60 0.5 hzs7lc2 7.3 7.7 0.5 1 3.5 60 0.5 hzs7lc3 7.5 7.9 0.5 1 3.5 60 0.5 hzs9la1 7.7 8.1 0.5 1 6 60 0.5 hzs9la2 7.9 8.3 0.5 1 6 60 0.5 hzs9la3 8.1 8.5 0.5 1 6 60 0.5 hzs9lb1 8.3 8.7 0.5 1 6 60 0.5 hzs9lb2 8.5 8.9 0.5 1 6 60 0.5 hzs9lb3 8.7 9.1 0.5 1 6 60 0.5 hzs9lc1 8.9 9.3 0.5 1 6 60 0.5 hzs9lc2 9.1 9.5 0.5 1 6 60 0.5 hzs9lc3 9.3 9.7 0.5 1 6 60 0.5 hzs11la1 9.5 9.9 0.5 1 8 80 0.5 hzs11la2 9.7 10.1 0.5 1 8 80 0.5 max. 2.9 max. 1.9 glass case do-34 max. 0.45 min. 27.5 min. 27.5 xxx cathode band part no. dimensions in mm black black 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification semtech
characteristics at t a = 25 (v f = 1 v max. at i f = 100 ma) type zener voltage 1) reverse leakage current dynamic resistance v zt at l zt i r at v r z zt at l zt min. (v) max. (v) (ma) max. (a) (v) max. ( ? ) (ma) hzs11la3 9.9 10.3 0.5 1 8 80 0.5 hzs11lb1 10.2 10.6 0.5 1 8 80 0.5 hzs11lb2 10.4 10.8 0.5 1 8 80 0.5 hzs11lb3 10.7 11.1 0.5 1 8 80 0.5 hzs11lc1 10.9 11.3 0.5 1 8 80 0.5 hzs11lc2 11.1 11.6 0.5 1 8 80 0.5 hzs11lc3 11.4 11.9 0.5 1 8 80 0.5 hzs12la1 11.6 12.1 0.5 1 10.5 80 0.5 hzs12la2 11.9 12.4 0.5 1 10.5 80 0.5 hzs12la3 12.2 12.7 0.5 1 10.5 80 0.5 hzs12lb1 12.4 12.9 0.5 1 10.5 80 0.5 hzs12lb2 12.6 13.1 0.5 1 10.5 80 0.5 hzs12lb3 12.9 13.4 0.5 1 10.5 80 0.5 hzs12lc1 13.2 13.7 0.5 1 10.5 80 0.5 hzs12lc2 13.5 14 0.5 1 10.5 80 0.5 hzs12lc3 13.8 14.3 0.5 1 10.5 80 0.5 hzs15l1 14.1 14.7 0.5 1 13 80 0.5 hzs15l2 14.5 15.1 0.5 1 13 80 0.5 hzs15l3 14.9 15.5 0.5 1 13 80 0.5 hzs16l1 15.3 15.9 0.5 1 14 80 0.5 hzs16l2 15.7 16.5 0.5 1 14 80 0.5 hzs16l3 16.3 17.1 0.5 1 14 80 0.5 hzs18l1 16.9 17.7 0.5 1 15 80 0.5 hzs18l2 17.5 18.3 0.5 1 15 80 0.5 hzs18l3 18.1 19 0.5 1 15 80 0.5 hzs20l1 18.8 19.7 0.5 1 18 100 0.5 hzs20l2 19.5 20.4 0.5 1 18 100 0.5 hzs20l3 20.2 21.1 0.5 1 18 100 0.5 hzs22l1 20.9 21.9 0.5 1 20 100 0.5 hzs22l2 21.6 22.6 0.5 1 20 100 0.5 hzs22l3 22.3 23.3 0.5 1 20 100 0.5 hzs24l1 22.9 24 0.5 1 22 120 0.5 hzs24l2 23.6 24.7 0.5 1 22 120 0.5 HZS24L3 24.3 25.5 0.5 1 22 120 0.5 hzs27l1 25.2 26.6 0.5 1 24 150 0.5 hzs27l2 26.2 27.6 0.5 1 24 150 0.5 hzs27l3 27.2 28.6 0.5 1 24 150 0.5 hzs30l1 28.2 29.6 0.5 1 27 200 0.5 hzs30l2 29.2 30.6 0.5 1 27 200 0.5 hzs30l3 30.2 31.6 0.5 1 27 200 0.5 hzs33l1 31.2 32.6 0.5 1 30 250 0.5 hzs33l2 32.2 33.6 0.5 1 30 250 0.5 hzs33l3 33.2 34.6 0.5 1 30 250 0.5 hzs36l1 34.2 35.7 0.5 1 33 300 0.5 hzs36l2 35.3 36.8 0.5 1 33 300 0.5 hzs36l3 36.4 38 0.5 1 33 300 0.5 1) tested with pulses tp = 20 ms. hzs?l series silicon epitaxial planar zener diodes 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification semtech
ambient temperature: ta ( c) o 0 25 100 150 0 100 200 300 power dissipation: ptot (mw) 400 500 200 power derating curve hzs?l series silicon epitaxial planar zener diodes 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification semtech

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